| 摘要 |
PURPOSE:To obtain the small-areaed capacitor of large capacitance by a method wherein a diffusion layer having the conductive type different from that of an Si substrate is provided in the vicinity of the end part of the interelement isolation insulating film of the Si substrate, and a conductive film is formed between the Si substrate and the diffusion layer. CONSTITUTION:An interelement isolation insulating film 2 of 5,000Angstrom in thickness, for example, consisting of SiO2 is provided on an N type Si substrate, a contact hole is formed at the part where a capacitor will be formed, and a photoresist 8 is formed in such a manner that 1mum of the circumferential part of the contact hole will not be covered. Then, B<+> ions are implanted into the circumferential part of said contact hole, and after a P<+> diffusion layer 6 has been formed by performing a heat treatment in an N2 atmosphere, the generated Si oxide film is removed by performing an etching. Then, palladium is vapor-deposited on the whole surface of the hole, and a conductive film 7 consisting of palladium silicide is formed by performing a heat treatment. Then, when a dielectric film 3 consisting of tantalum oxide is provided on the film 7 by performing a sputtering method and the like, no disconnection is generated on the end part of the film 7 and the film 3, whereas a disconnection is generated on the film 3 at the bird's beak part 2a, thereby enabling to reduce the distance between the film 3 and the film 7 to 0.1mum or thereabout. |
