发明名称 |
FEEDBACK CIRCUIT FOR A SEMICONDUCTOR ACTIVE ELEMENT SENSOR |
摘要 |
<p>The drain voltage of an IGFET having a channel responsive to the change in physical quantity to be measured is negatively fed back to the gate terminal of the IGFET. The negative feedback loop includes series connection of a first amplifier having an amplification factor larger than unity and a second amplifier having an amplification factor smaller than unity. The interconnection point between the first and the second amplifiers is connected to the output terminal. There is provided a stable, highly sensitive and highly reliable semiconductor sensor.</p> |
申请公布号 |
EP0118605(B1) |
申请公布日期 |
1988.02.24 |
申请号 |
EP19830111718 |
申请日期 |
1983.11.23 |
申请人 |
HITACHI, LTD. |
发明人 |
TANABE, MASANORI;KAWAKAMI, KANJI |
分类号 |
G01D5/14;G01D5/18;G01L1/18;G01L9/00;G01L9/06;G01N27/00;G01N27/07;G01N27/12;G01N27/414;H01L29/84;(IPC1-7):G01D5/18;G01L1/16 |
主分类号 |
G01D5/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|