发明名称 FEEDBACK CIRCUIT FOR A SEMICONDUCTOR ACTIVE ELEMENT SENSOR
摘要 <p>The drain voltage of an IGFET having a channel responsive to the change in physical quantity to be measured is negatively fed back to the gate terminal of the IGFET. The negative feedback loop includes series connection of a first amplifier having an amplification factor larger than unity and a second amplifier having an amplification factor smaller than unity. The interconnection point between the first and the second amplifiers is connected to the output terminal. There is provided a stable, highly sensitive and highly reliable semiconductor sensor.</p>
申请公布号 EP0118605(B1) 申请公布日期 1988.02.24
申请号 EP19830111718 申请日期 1983.11.23
申请人 HITACHI, LTD. 发明人 TANABE, MASANORI;KAWAKAMI, KANJI
分类号 G01D5/14;G01D5/18;G01L1/18;G01L9/00;G01L9/06;G01N27/00;G01N27/07;G01N27/12;G01N27/414;H01L29/84;(IPC1-7):G01D5/18;G01L1/16 主分类号 G01D5/14
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