| 摘要 |
PURPOSE:To improve the reliability of the continuity of a connecting part and facilitate forming the series connection by forming a connection groove so as to make the width of the groove at an amorphous semiconductor layer part wider than the width of the groove at a lower electrode part to form a shelf part where the lower electrode is exposed in the groove. CONSTITUTION:A plurality of generating regions (a) and (b) in which amorphous semiconductor layers 3a and 3b are provided between lower electrodes 2a and 2b and upper electrodes 4a and 4b respectively are formed on a substrate 1. Further, the series connection of the generating region (a) and the generating region (b) is achieved by filling a connection groove 6 which is formed by applying a laser beam to the end of the lower electrode 2a of the generating region (a) with conductive material. In order to make the continuity area between the lower electrode 2a in the connecting groove 5 and the upper electrode 4b of the adjacent generating region (b) larger, the lower electrode 2a is exposed to form a shelf part 7. to give the groove 5 a step-shape. In other words, the groove width L at the amorphous semiconductor layer 3a part is larger than the groove width (l) at the lower electrode 2a part. With this constitution, the continuity area of the lower electrode part 2a can be extended to the shelf part 7 of the step-shape in addition to the thickness of the lower electrode 2a so that the reliability of continuity at the connection part can be improved. |
