| 摘要 |
PURPOSE:To enable a hot electron transistor to be formed by a method wherein the second semiconductor crystal layer with less energy gap than that of the first semiconductor crystalline substrate is formed on the substrate and then the first semiconductor crystal layer is formed on the second semiconductor crystal layer. CONSTITUTION:An N type Si single crystal layer 2 is formed into a heterostructure in thickness not to be removed by recoupling on an N type SiC substrate 1 and then an N type SiC crystal layer 3 as an emitter region is also formed into the heterostructure on the Si single crystal layer 2. The energy band gaps 21, 22 respectively in the emitter region 3 formed of the SIC crystal and the collector region 1 represent 2.2 eV while the other energy band gap 23 of Si crystal forming the base region 2 represents 1.1 eV. Therefore' when the gap between emitter region 3 and base region 2 is impressed with voltage, a potential barrier is formed on the boundary between the emitter region 3 and the base region 2 so that hot electrons 24 with high potential energy passing the barrier may rapidly pass the base region 2 to reach the collector region 1. |
