Method and apparatus for chemical vapor deposition.

摘要

A method of and an apparatus for a CVD in which a reaction gas flow (R) in a process chamber (12) can be externally controlled to concentrate reaction components only in the vicinity of a substrate (20), thereby growing a thin film of high quality on the substrate with excellent reproducibility, uniformity and controllability. In the present invention, the growth of an encroachment and voids can be effectively suppressed by parameters such as growing temperature and reaction gas concentration.