| 摘要 |
PURPOSE:To improve the efficiency of plasma treatment such as sputtering by radiating electromagnetic microwave to at least one electrode, impressing high frequency voltage to electrodes, and forming plasma between a couple of a electrodes. CONSTITUTION:In a sputtering device, a target 13 is mounted to a lower electrode 7 and a wafer 12 is set to an upper electrode 6, and then a treating room 1 is evacuated in high vacuum and supplied with gaseous argon. The microwave emitted by magnetrons 17, 18 is radiated through wave guides 15, 16. By this radiation, a high frequency voltage is impressed between electrodes 6, 7 and a plasma 23 is formed. In this case, the impressed electric power frequency is set at a extremely high value. The self-bias voltage generated between electrodes 6 and 7 is improved thereby, and, by raising the electric charge density, particles to be sputtered are effectively emitted from the target 13 by electrons and efficiently sticked on the wafer 12. |
