| 摘要 |
PURPOSE:To form a Ti layer having specified thickness in a short time by radiating an energy beam on a surface of a Ti sheet to increase the deposition speed of high-purity Ti when the TiI4 formed by the reaction of sponge Ti with I2 is decomposed by the high temp. Ti sheet and the high-purity Ti layer is formed on the Ti sheet. CONSTITUTION:Sponge Ti 18 and I2 19 are placed in a reaction vessel 11, and the Ti sheet 13 as a substrate and a induction heating coil 14 are arranged above the materials. A high-frequency current is passed through the coil 14 from an electric power source 15 to heat the Ti sheet 13 to 1,100-1,500 deg.C, the vessel 11 is put in a thermostatic bath 12 heated at 450-600 deg.C to allow the Ti 18 to react with the I2 19 to obtain TiI4, is brought into contact with the upper high-temp. Ti sheet 13 and decomposed, and a high-purity Ti layer is deposited on the Ti sheet 13. In this case, a high-energy beam such as an electron beam and a laser beam is radiated on the surface of the Ti sheet 13 from an electron gun 16, etc., to promote the decomposition reaction of TiI4, and a high-purity sputtering Ti target with thick high-purity Ti layer is produced in a short time.
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