| 摘要 |
PURPOSE:To obtain high reliability of connection between layers by providing interlayer connecting post having a tapered sidewall formed thinner at the upper side than at the lower side. CONSTITUTION:An aluminum film 12 is deposited on a semiconductor substrate 11, and an Mo film 13 for a connecting post is deposited. Then, a photoresist pattern 14 is formed on the film 13 according to a desired forming pattern of the lower layer conductive film 12, and with the pattern as a mask an Mo film pattern 13' is formed by an isotopic etching method. With the pattern 14 and the film 13' as masks the film 12 is etched by anisotropic etching method to form a lower layer conductive film pattern 12', and the photoresist 14 is then removed. Then, a photoresist pattern 15 is formed at the position for covering desired interlayer connecting post forming part of the pattern 13' and the aluminum film pattern of the lower side, as a mask, the pattern 13' is etched by isotopic etching method, and the photoresist 15 is then removed.
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