| 摘要 |
PURPOSE:To eliminate the influence of heating by polishing the surface roughness of several Angstroms in superplane polishing step of bonded parts of two semiconductor substrates, then etching them in a vacuum unit, and superposing two substrates in vacuum to bond them in the same vacuum unit. CONSTITUTION:Elements 2 are formed on a single crystal substrate 1, an insulator is deposited thereon to form an insulator layer 3. The substrate 1 on which the insulators are deposited is bonded to a single crystal substrate 4 by polishing the upper surface of the layer 3 and the lower surface of the substrate 4 in the surface roughness of several Angstroms in superplane polishing step, and bonding them. Thus, a multisubstrate in which substrates formed with integrated circuits or substrates having different properties are bonded in multilayers can be manufactured in mass production. |
