| 摘要 |
PURPOSE:To effectively ignite hydrogen discharged into an oxygen atmosphere by piping at least an oxygen introduction tube along the wall in a core tube heated directly by a heater. CONSTITUTION:Oxygen is heated to a high temperature by means of radiation heat from the tube wall heated by a heater 16 when the oxygen flows along the inner wall of a core tube 11 heated by the heater 16 in a tube 14, and when the oxygen heated to the high temperature is discharged from an oxygen introduction tube opening 15, the temperature of the part of a hydrogen introduction tube opening 13 becomes higher than the igniting temperature of the hydrogen in the oxygen even when the heating temperature of the heater 16 is low. Thus, when the hydrogen introduced from a hydrogen introduction tube 12 is discharged from the opening 13, it is immediately ignited smoothly to generate a clean steam due to the combustion of the hydrogen and the oxygen. Thus, the combustion of the hydrogen can be smoothly and safely performed in a range of lower temperature of the furnace, and the formation of a thin oxide film due to the miniaturization of a semiconductor device and good controllability of steam process at lower temperature safely in manufacturing steps of the semiconductor device.
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