| 摘要 |
PURPOSE:To prevent generation of crack which give adverse effect on the active layer by forming a groove by etching only a cap layer and realizing electrical insulation by a first conductivity type separation region. CONSTITUTION:A semiconductor wafer, which is formed by stacking at least a current rejection layer 2 providing in parallel a plurality of striped current injection region 3, a first conductivity type clad layer 4, an active layer 5, a second conductivity type clad layer 6 and a second conductivity type cap layer 2, is prepared on a first conductivity type semiconductor substrate l. Next, parallel grooves 10 are formed at the upper part of the current rejection layer 2 by selectively etching the second conductivity type cap layer 7 and a first conductivity type separation region 13 which is extending to the first conductivity type clad layer 4 is formed through the second conductivity type clad layer 6 and the active layer 5. A cleavage bar is formed by cleaving the surface in the direction crossing the grooves 10. Thereby, a stress generated at the time of forming cleavage is applied to the interface between the second conductivity type cap layer 7 and the second conductivity type clad layer 6 and crack which gives influence on the active layer 5 is no longer generated.
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