发明名称 MANUFACTURE OF PHOTOELECTRIC CONVERTER
摘要 <p>PURPOSE:To form reactive gas having reducing gas on a light transmission conductive film without whitening by using a zinc oxide or a conductive film which mainly contains zinc oxide. CONSTITUTION:One conductivity type first nonsingle crystal semiconductor layer or a semiconductor layer which mainly contains silicon is formed by film forming gas containing reducing gas by a photochemical vapor phase reaction method on a light transmission conductive film having conductivity such as a conductive film to which zinc oxide or an impurity such as aluminum, germanium or silicon is added into zinc oxide. Then, an intrincic second nonsingle crystal semiconductor layer is formed on the semiconductor layer, and a third nonsingle crystal semiconductor layer of a conductivity type opposite to that of the first conductor is formed on the second semiconductor layer. In this case, the light transmission conductive film exhibits high conductivity in a reducing atmosphere not to be whitened.</p>
申请公布号 JPS62259480(A) 申请公布日期 1987.11.11
申请号 JP19860101829 申请日期 1986.05.01
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TAKAYAMA TORU;YAMAZAKI SHUNPEI;SUZUKI KUNIO;ABE MASAYOSHI;KANEHANA MIKIO;FUKADA TAKESHI;SHIBATA KATSUHIKO;USUDA MASATO;HAMAYA TOSHIJI
分类号 H01B5/14;H01L31/04;H01L31/06;H01L31/08;H01L31/18 主分类号 H01B5/14
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