| 摘要 |
PURPOSE:To enhance response while reducing the capacity possessed by a photodiode, by setting the thickness of the I-layer of the photodiode to a predetermined value or more. CONSTITUTION:A photodiode is used as a photometric element for performing the photometry of an image pickup surface and the photometry of the light reflected from the surface of a photographic film or shutter film. This photodiode is a PIN type one having such a structure that a transparent electrode 2, a P-layer 3 made of P-type a-Si : H, an I-layer 17 made of a-Si : H showing an intrinsic semiconductive characteristic, a N-layer 5 made of N-type a-Si : H and a metal electrode 6 made of Al or the like are successively laminated to a transparent substrate 1 and the thickness of the I-layer 17 is set to 10,000 Angstrom .
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