| 摘要 |
PURPOSE:To obtain a structure insulating film with a favorable conductor pattern, and to improve the degree of integration, reliability, etc., of a semiconductor device by a method wherein when a lower layer electrode wiring and the like and a bonding pad and the like are to be formed by means of the same conductor layer, a pattern corresponding to the conductor pattern formed on the insulating film is processed by dividing it into two groups, a first group of smaller dimensions and a second group of larger ones. CONSTITUTION:An SiO2 film is formed as an insulating film 2, for example, on a semiconductor substrate 1 formed with the necessary semiconductor region, and patterns 3, 4a, 4b, etc., are formed as a window to penetrate the insulating film 2, or as recess parts not to penetrate the insulating film 2 corresponding to the necessary conductor pattern. An electrode wiring conductor layer 7a is removed from the upper surface up to expose a polycrystalline Si buffer layer 6 on the insulating film 2. The exposed polycrystalline Si buffer layer 6 is selectively removed, and moreover an SiN film 5a is removed. An SiN film 5b is coated again, and patterning is performed to the film thereof to remove the part of the large pattern 3 leaving the parts of the small patterns 4a, 4b. A second conductor layer 7b is patterned to the necessary shape, and conductor pattern 7B of bonding pad, etc. is completed. After then, the SiN film 5b is removed.
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