| 摘要 |
PURPOSE:To prevent the formation and deposition of flakes of fine oxide particles on the inner wall of the upper part of a CVD reaction furnace by placing means of blowing gaseous O2 in an inner bell jar and on the wall of an intermediate ring in the furnace. CONSTITUTION:In a CVD reaction furnace 1, the 1st O2 holder jacket 30 is placed in an inner bell jar 7 and the 2nd O2 holder jacket 40 on the inner wall of an intermediate ring 12. Gaseous O2 introduced into the jackets 30, 40 is blown into the furnace 1 through many tiny holes pierced in the jackets. A rising flow of reactive gases is vanished by the blown gaseous O2 and the resi dence phenomenon of the reactive gases is not caused. Accordingly, the forma tion and deposition of flakes of fine particles of oxides such as SiO and SiO2 on the inner wall of the upper part of the furnace above a wafer setting table 4 can be prevented.
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