| 摘要 |
PURPOSE:To form heat radiating metal readily, by forming an element isolating groove reaching a source electrode at a boundary part between the source electrode and an element isolating region, forming a metal layer comprising the heat radiating metal on the back surface and the side surface of each semiconductor chip, and thereafter isolating each semiconductor chip. CONSTITUTION:The surface of a semiconductor substrate 11, on which a source electrode S is formed, is bonded to the upper surface of a silicon supporting stage 102 with a fusible resin layer 101. A resist film 15 is formed. A hole is provided at a position corresponding to a boundary part between the source electrode S and an element isolating region 12. Ion etching is performed, and an element isolating groove 16 reaching the source electrode S is formed. Only the resist film 15 corresponding to the element isolating region 12 is made to remain, and gold is evaporated on the entire back surface in a vacuum state. The resist film 15 is fused and removed. A second gold layer 17 is formed on the back surface of the semiconductor substrate 11 and the side surface of the element isolating groove 16. A gold plated layer 18 is formed. The semiconductor substrate 11 in the element isolating region, an insulating film 13 and a first gold layer 14 are etched away. An individual semiconductor chip is made independent. Finally, the fusible resin layer 101 is fused.
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