发明名称 FORMATION OF THROUGH-HOLE
摘要 PURPOSE:To simplify mask forming processes and to obtain an accurate through hole, by forming a third film body comprising light-sensitive corrosion-resisting resin on a first resin film body through a second resin film body, which is soluble to developing liquid, partially exposing and developing the third film body, performing etching through a mask formed in this way, and providing the through-hole in the first film body. CONSTITUTION:On a substrate 1, a polyimide resin film is formed as a first film body on a first Al interconnecting layer. A polyimide silane layer 3 is formed as a second film body. Photoresist 4 is formed as a third film body. By using a metal mask 5, the layer 4 is partially exposed and developed. At this time, the layer 3 is also etched with developing liquid and undergoes undercut. Thereafter, e.g., with the layer 4 as a mask, reactive ion etching is performed. Then, with the layer 3 as a mask, the layer 2 undergoes anisotropic ion etching, and a hole having the vertical side surface is provided. At the same time, the layer 4 is etched, and made to disappear. When plasma etching is performed, the layer 2 undergoes isotropic etching, and a through-hole 8, whose upper part is wide and lower part is narrow, is obtained.
申请公布号 JPS62221119(A) 申请公布日期 1987.09.29
申请号 JP19860064105 申请日期 1986.03.24
申请人 HITACHI LTD;HITACHI MICRO COMPUT ENG LTD 发明人 ONO RYOICHI;MATSUZAKI SAKAE
分类号 H01L21/768;H01L21/302;H01L21/306;H01L21/3065;H01L23/522 主分类号 H01L21/768
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