| 摘要 |
PURPOSE:To increase a current gain by regulating the effective height of a barrier on which carrier moving in a hetero junction surface perpendicular direction overrides by selectively doping at barrier side. CONSTITUTION:In an element using a hetero junction and utilizing a carrier circular transfer phenomenon perpendicular to the hetero junction surface, selective doping is performed at part of the junction at the side of a barrier layer to regulate the effective barrier on which the carrier overrides by generating the bent of a band. Since the selective doping is achieved at part of the hetero barrier layer and the height of the effective barrier on which the carrier tends to override is varied by utilizing the bent of the band generated from the result of the movements of electrons due to the difference of electron affinity, irregular lattice alignment is avoided, and lattice constant ratio DELTAA/A<=10<-3> can be, for example obtained. It can be applied to the hetero junction device of various compounds such as HET in which InGaAs, InAlAs are laminated on an InP substrate, or HET in which GaAs, InGaP are laminated on a GaAs substrate. |
