发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To reduce astigmatism by forming a laser resonator to a curved- surface shape in a semiconductor laser having stripe width in which a single transverse mode is obtained. CONSTITUTION:A sectional shape in a plane parallel with an active layer for a laser resonator, a semiconductor end surface, is formed to a curved-surface shape. Spot width is narrowed in a cross section such as a convex end surface 1 while the radius of curvature of a wave front (a phase front) is increased with the decrease of the radius of curvature R of the end surface, reaches infinity and takes a negative value and the absolute value is reduced again. On the other hand, spot width is broadened in a concave end surface 2, and the radius of curvature of the wave front is decreased with the shrinkage of the radius of curvature R of the end surface. Accordingly, since the end surfaces are formed to the curved-surface shape, spot width and the redius of curvature of the wave front can be altered, thus reducing astigmatism.
申请公布号 JPS62213188(A) 申请公布日期 1987.09.19
申请号 JP19860054746 申请日期 1986.03.14
申请人 HITACHI LTD 发明人 KAYANE NAOKI;YAMASHITA SHIGEO;NAKATSUKA SHINICHI;YAMANAKA AKEMI;ONO YUICHI;KONO TOSHIHIRO;UOMI KAZUHISA;KAJIMURA TAKASHI;TANAKA TOSHIAKI;AIKI KUNIO
分类号 H01S5/00;H01S3/00;H01S5/026;H01S5/10 主分类号 H01S5/00
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