发明名称 Method of bonding semiconductor devices together
摘要 Disclosed is a method of realizing high-density and inexpensive semiconductor apparatus by joining the electrodes of two semiconductor devices. A metal bump formed on a substrate is transferred and joined onto the electrode of first semiconductor device, and electrode of second semiconductor device and the metal bump transferred and joined on the first semiconductor device are positioned, pressed and heated, thereby joining the two semiconductor devices together.
申请公布号 US4693770(A) 申请公布日期 1987.09.15
申请号 US19860877967 申请日期 1986.06.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HATADA, KENZO
分类号 H01L21/60;H01L21/68;H01L21/98;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):C25D5/48 主分类号 H01L21/60
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