| 摘要 |
PURPOSE:To improve soft-error resisting strength and noise margin characteristics, by forming an insulating capacitance element, which is constituted by a metal silicide film, an insulating film and an electrode film, on the surface of a silicon substrate including recess parts and on the surface of an isolating insulating film, thereby broadening the area of the insulating capacitor element. CONSTITUTION:Metal silicide films 6a and 6b are formed by the silicide reaction of a silicon substrate 1 and a metal film. At this time, recess parts 7a and 7b are formed in the surface of the silicon substrate in the vicinity of the peripheral part of an isolating insulating film 3. A memory insulating film capacitance element for storing electric charge, which comprises the metal silicide films 6a and 6b, insulating films 9a and 9b and an electrode film 10, is formed on the surface of the silicon substrate including the recess arts and on the surface of the isolating insulating film. Thus, the area of the insulating film capacitance element becomes broad and the amount of the electric charge, which can be stored in the element, is increased. The metal silicide film is electrically isolated by the insulating film on a part of the surface of the isolating insulating film. |
