| 摘要 |
PURPOSE:To select and deposit metal very excellently, by overlapping an insulating film having excellent adhesion on the surface of a semiconductor substrate, and covering a part other than a connecting window part with an insulating film, on which metal is hard to be deposited. CONSTITUTION:A thermal oxide film 2 is formed on an Si substrate 1. A PSG film 3 is overlapped by a CVD method and a window is opened. When a W film 5 is deposited by a CVD method, it is hard to be deposited on the PSG but is selectively deposited on the Si substrate. In this method, the interface between the substrate 1 and the thermal oxide film has the excellent adhesion without the intrusion of the metal. A metal nucleus is not grown on a part other than the connecting window.
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