| 摘要 |
PURPOSE:To simultaneously monitor a disturbance test by providing simultaneously selecting function of a word line and a data line in an address selector, and identifying whether a high voltage is transmitted through an MOSFET of series mode to the word line or the data line or not. CONSTITUTION:All FAMOS transistors are set to erased state, all word lines and all data lines are set to selective state, a high voltage Vpp is supplied to the word line, and the ground potential of a circuit is supplied through an outer terminal I/O to the data lines. Then, all word lines are set to nonselective state, and a high voltage Vpp is supplied from the external terminal I/O to all the data lines. To switch all the word lines to nonselective state (0V), it is supplied to an X-address buffer. External address signals are all switched from low level to high level. Then, an FAMOS transistor is set to a writing state, and a disturbance test is finished by repeating the operation. Thus, a disturbance test can be simultaneously performed with high reliability. |
