| 摘要 |
PURPOSE:To enable thicknesses of films deposited on a finishing wafer to be measured directly without using monitoring wafers, by depositing a sputtering film on the surface of a semiconductor wafer except chucking sections thereof with a part of the surface shielded. CONSTITUTION:In front of a wafer holder 10 for chucking a wafer 20, a target 30 is arranged in parallel with and at a given distance from the wafer holder 10. The target 30 is fixed to a target holder 31. A shutter 40 having a window 41 opened in the same size with the wafer 20 is disposed between the target 30 and the wafer holder 10. A high-voltage power supply 50 is connected to the wafer holder 10 and to the target holder 31 such that an anode is provided on the side of the wafer holder 10 and a cathode is provided on the side of the target holder 31. In order to perform the sputtering with the wafer 20 shielded partially, a projection is provided in a part of the window 41, for example, so that the projection blocks sputtered atoms and prevents the film deposition on the corresponding part of the wafer 20.
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