| 摘要 |
<p>PURPOSE:To manufacture a CdSe photoconductive film having high specific resistance and high sensitivity in good reproducibility in simple steps by forming a Cu deposition source independent from a CdSe deposition source, and depositing the CdSe film while adding Cu under the condition of specific range of the ratio of the molecular beam intensity of Cu to that of CdSe. CONSTITUTION:CdSe single crystal lump 5 having 99.999% of purity is filled in a deposition source crucible 1, and Cu 6 having 99.9999% of purity is filled as an impurity to be added in a deposition source crucible 2. The intensity of the molecular beam of CdSe or Cu injected from the deposition source to a substrate 3 to be deposited is measured by an ion gauge 4. A CdSe photoconductive film having high specific resistance and high sensitivity can be obtained under arbitrary conditions between 6X10<-4=PCu/PCdSe<=2X10<-3> of the specific ratio of the molecular beam intensity of CdSe to Cu.</p> |
