发明名称 |
Methods for forming lateral and vertical DMOS transistors |
摘要 |
A transistor is provided which includes an electrical contact (122) formed in a V-shaped groove (118). Because of the unique shape of the electrical contact, a smaller surface area is required for its formation thus rendering it possible to construct a transistor having a smaller surface area. The groove is formed by anisotropically etching an expitaxial layer (102) on a semiconductor substrate (100) using, for example, KOH.
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申请公布号 |
US4682405(A) |
申请公布日期 |
1987.07.28 |
申请号 |
US19850757582 |
申请日期 |
1985.07.22 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
BLANCHARD, RICHARD A.;PLUMMER, JAMES D. |
分类号 |
H01L21/336;H01L29/417;H01L29/78;(IPC1-7):H01L21/425;H01L21/465 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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