| 摘要 |
PURPOSE:To obtain a stable contact electrode without possibility of damage of a shallow junction by adding a preannealing step in twice film forming method of high melting point metal to form an extremely thin high quality silicide layer without considerably proceeding silicification even in the later high temperature heat treatment. CONSTITUTION:A contact hole 3 is formed in an insulating layer film 2 on an Si substrate (P-type) 1, and covered with a primary high melting point metal film 4. Then, a preannealing is executed. Subsequently, ions are implanted to the substrate 1 to form an ion implanted region 6 in the substrate 1 near a boundary between the substrate 1 and a primary W film 4, and an extremely thin silicide layer 7 is simultaneously formed near the boundary. Thereafter, an annealing is performed. Thus, the crystallization of the layer 7 is advanced, and the upper layer of the layer 7 of the film 4 remains not silicified but as the metal. Then, the film 4 is covered with a W film as a second high melting point metal film 8. Thereafter, an annealing is executed to reduce the resistance of the W film and to activate the region 6, thereby forming an N-type diffused layer 9 on the substrate 1.
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