| 摘要 |
PURPOSE:To reduce the area of a substrate by forming an element annexed to an active element onto an active element region shaped to the substrate through an insulating means. CONSTITUTION:A base region 4 having a reverse conduction type is formed to a P-type or N-type semiconductor substrate 2 through the diffusion, etc. of an impurity, and an emitter region 6 having a conductive type reverse to the base region 4 is shaped selectively to one part of the surface layer of the base region 4. An oxide film 22 coating the surface of the semiconductor substrate 2 is formed, openings 24, 26 are shaped selectively, and electrodes 14, 16 are shaped while an electrode 18 is also formed onto the surface of the oxide film 22. A protective film 32 as an insulating layer coating the electrodes 14, 16, 18 and the surface of the oxide film 22 is shaped, and openings 34, 36, 38 for wire bonding are formed selectively to the protective film 32. Resistance elements 10, 12 are shaped onto the protective film 32 in the upper surface section of the base region 4 as annexed elements by polysilicon, etc.
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