| 摘要 |
PURPOSE:To form a gate electrode offset on the source side in a recess by a method wherein a spacer is formed on a semiconductor active layer, a resist film is formed thereon, an aperture is formed in the resist film and the spacer is removed by performing an etching. CONSTITUTION:A semiconductor active layer 3 and a spacer 6 are formed on a substrate 1, then a resist film 7 is formed. An exposing treatment and developing is performed on the film 7 as a pattern has been formed thereon and an aperture 7A is formed. The spacer 6 is removed by performing an etching and a recess 8 is formed in the active layer 3. A gate electrode 9G offset on the source side in the recess 8 is formed in the surface of the recess 8. As a result, the gate electrode offset on the source side in the recess 8 can be formed in the surface of the recess 8 formed in the active layer 3 between a source electrode 4 and a drain electrode 5. |
