| 摘要 |
PURPOSE:To avoid a direct contact between a nitride film and a second conductor layer and thereby prevent leakage current through a nitride film by covering the end face of a nitride film with a first oxide film, then depositing a second conductor layer and forming a pattern. CONSTITUTION:An element separation region 12 is provided on a p-type silicon substrate 11, an oxide film 13 and a nitride film 14 are formed, a nitride film 14 is formed on the capacitor part, the oxide film 13 is removed through a mask and an oxide film 5 is provided thereon. After a polysilicon thin film 16 is deposited thereon, the phosphorus is doped by the thermal diffusion and the polysilicon thin film 16 is photoetched in the same pattern as the nitride film 14. After depositing an oxide film 17, the entire part is oxidized until the polysilicon thin film 16 is oxidized in the depth of 0.2mum. Thereafter, the oxide film 17 is removed by the anisotropic etching until the oxide film 17 on the active region not covering the polysilicon thin film 16 is eliminated and an oxide film 18 is provided to the exposed substrate surface by the thermal oxidation. Thereafter, polysilicon 19 as the second layer is deposited and phosphorus is then doped by the thermal diffusion. Finally, the polysilicon thin film 19 is formed as the desired pattern. |
