| 摘要 |
PURPOSE:To prevent the doping of Fe to an active layer by placing Fe downstream than a substrate at the time of active layer growth after the growth of a buffer layer providing a movable holder in a reaction tube. CONSTITUTION:A source reservoir 3 previously charged with source Ga 3a is provided in a reaction tube 2 and after temperature is raised in the atmosphere of H2, AsCl3 gas is supplied with a carrier gas H2 from a source gas tube 7 and As is saturated in the source 3a. The temperature is lowered to a room temperature, semi-insulating GaAs seed crystal 4a is placed on a susceptor 4, an Fe holder 5 charged with solid phase Fe is provided between the susceptor 4 and the source reservoir 3, AsCl3 is introduced from gas pipes 7, 9 and a buffer layer is grown. Then, a active layer is grown after the holder 5 is moved to downstream of the susceptor 4 with a handling rod 6.
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