| 摘要 |
PURPOSE:To obtain a semiconductor device by ion implantation of elements of compound semiconductor, forming a fine and stable high-resistance region to a part thereof and combining it with epitaxial growth. CONSTITUTION:The n-GaAs 2 is formed epitaxially by the MBE method on a half-insulated GaAs substrate 1, the layer 2 and the substrate 1 are etched to narrow the width of center region. The Ga ion implanted region is formed in such a depth as reaching the substrate 1 at the center of narrow region by the focused ion beam in diameter of 0.1mum. The dose amount is 3-5X10<13>cm<-2>. The annealing is then carried out in the H2 ambience. As a result, the pi layer of high specific resistance is formed in the width of 0.1mum, the equivalent resistance between electrodes 21, 22 by n-pi-n exceeds 2X10<6>OMEGA and thereby the epitaxial layer 2 is insulated and isolated. This phenomenon also generates high specific resistance layer even in case the Ga ion is implanted to the hybrid semiconductor crystal formed on the basis of GaAlAsXGaAs. Ga is stable in the crystal because it is an element and does not give any influence on the characteristics, unlike the impurity. A semiconductor device by a new structure can be obtained by making use of a local high resistance. |
