| 摘要 |
PURPOSE:To secure a very shallow impurities zone in a highly accurate manner, by adding a decelerating electrode, generating an electric field opposite to an ion accelerating direction, to the vicinity of a processed body, and implanting the specified ion uniformly only into a surface zone of the processed body. CONSTITUTION:An ion out of an ion source 11 is accelerated by an accelerator 13, putting it into a master filter 15 via a slit plate 14, and only the required ion is selected. Next, it is led into a scanning electrode 17 through a slit plate 16 and implanted into a processed body 19 while scanning. At this time, a gridlike decelerating electrode 18 is added to the vicinity of the processed body, whereby an electric field opposite to an ion accelerating direction is made so as to be generated. And, the ion being scanned by the scanning electrode 17 is rapidly decelerated, and the specified ion efficiently and uniformly implanted into a surface zone of the processed body 19. Therefore, a very shallow impurities zone is easily formable in a highly accurate manner.
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