发明名称 COMPLESSO CIRCUITALE AD ALTA FREQUENZA E DISPOSITIVO SEMICONDUTTORE PER L'IMPIEGO IN TALE COMPLESSO
摘要 In a high-frequency circuit arrangement, passive parts of the circuit are realized in a semiconductor body in which active circuit elements of another semiconductor material are located in recesses in the semiconductor body. When the semi-conductor body is at least in part low-ohmic, a reference plane, for example, the ground plane, can extend very close to the elements of the circuit arrangement. Consequently, due to the shorter connections required, parasitic effects are considerably reduced. When only one active element is mounted and only connections for this element are formed on the semiconductor body, a very suitable support for mounting and measurement is obtained.
申请公布号 IT1170151(B) 申请公布日期 1987.06.03
申请号 IT19830021641 申请日期 1983.06.15
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 GOEDBLOED WILLEM
分类号 H01L27/00;H01L21/338;H01L21/60;H01L23/14;H01L23/66;H01L25/16;H01L29/812 主分类号 H01L27/00
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