| 摘要 |
PURPOSE:To eliminate breakdown at step parts and to enhance reliability, by sequentially attaching the first Si oxide film and an Si nitride film on the main surface of an Si substrate, attaching the second Si oxide film on an opening part, which is provided in the Si nitride film, and the Si nitride film, and forming an opening part in said first and second Si oxide film. CONSTITUTION:On an n<+> Si substrate 1, and n-type Si Ep layer 2, a p' guard ring 3, an Si oxide film 4 and an Si nitride film 5 are sequentially formed. Thereafter, an opening part A is formed in the Si nitride film 5, with the Si oxide film 4 being made to remain. An Si oxide film 6 is attached on the opening part A and the Si nitride film 5 to a specified thickness. Thereafter, an opening part B, which is narrower than the opening part A, is formed as a contact part reaching the Si oxide film. At this time, the inner surface edge of the opening part A or B is made to be a slant shape. An electrode metal layer 7, which forms an SB electrode, is formed to a specified thickness. After the electrode part is formed, silicide is formed by heat treatment. Thereafter, an Al layer 8 is formed as a surface electrode in a range broader than the electrode metal layer 7. Thus the SB semiconductor device is formed.
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