| 摘要 |
PURPOSE:To obtain electron ray resist havng resistance to dry etching by combining bisphenol an dichlorotriazine. CONSTITUTION:A compsn. for negative type electron ray resist is obtd. by incorporating the polycyanurate obtd. by polycondensation of the bisphenol expressed by the formula I and the 2-substd. -4, 6-dichloro-Sym-triazine expressed by the formula II therein. Ar in the formula I is the group expressed by -C6H4-Q-C6H4- and one or two of the hydrogen atoms of respective benzene rings may be substd. with halogen. Q is the group expressed by -CR<1>R<2>-, -S-, -CR<3>(OH)-. R<1> and R<2> denote respectively a hydrogen atom, lower alkyl group or -CH2CO2H. R<3> denotes a lower alkyl group. R in the formula II denotes -N(CH2CH=CH2)2, -NHCH2CH=CH2, -OCH2CH=CH2, -O-glycidyl. |
