发明名称 REDUNDANCY CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To uniformly and stably cut a fuse for a redundancy circuit by forming the fuse of a 2-layer structure of a first and second films formed on a first layer made of a material different from the fuse, and narrowing the width of the line of the first film as compared with the width of the line of the second film. CONSTITUTION:Since the energy distribution of a laser beam is generally in a gauss distribution when emitting the laser beam from above a PSG film 4, heating temperature difference occurs between the center and the end of a fuse 73 for a redundancy circuit. In this case, the width l0 of the line of a polycrystalline silicon film 3a of the first layer of the fuse 73 is narrowed by 2DELTAl0 as compared with the width l1 of the line of the conventional fuse for a redundancy circuit. Accordingly, the heating temperature difference between the center and the end of the fuse 73 is decreased as compared with the conventional fuse 3b for the redundancy circuit. Thus, the film 3a of the first layer becomes uniformly and stably melted and expanded to uniformly and stably cut the fuse 73 for the redundancy circuit.
申请公布号 JPS6285442(A) 申请公布日期 1987.04.18
申请号 JP19850226518 申请日期 1985.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAGI HIROSHI
分类号 H01L21/82;H01L21/00;H01L21/268;H01L23/525 主分类号 H01L21/82
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