| 摘要 |
PURPOSE:To prevent a decrease in yield due to the breakage of substrates, by utilizing a GaAs substrate whose crystal axis orientation <110> is approximately vertical to the surface thereof, and cleaving the substrate such that the cleaved face is approximately parallel to the length of the substrate. CONSTITUTION:On one face of a p-typ GaAs substrate 1 whose crystal axis orientation <110> is approximately vertical to the surface thereof, an n-type GaAs layer 2 is epitaxially grown to have a thickness of about 1000Angstrom . A top- face electrode 3 is provided on the n-type GaAs layer 2, while a rear surface electrode 4 is provided on the other surface of the substrate 1. Further, in order to produce rectangular cells, the substrate 21 can be cleaved such that the cleaved face 23 is parallel to the longer side of the substrate, so that it can be substantially prevented from being broken. |
