| 摘要 |
PURPOSE:To obtain a field effect semiconductor device, which can implement high withstanding voltage even in AC driving, by providing means and resistor components having a rectifying function in the forward direction toward a gate electrode between main electrodes and the gate electrode. CONSTITUTION:Means and resistor components, which have rectifying characteristics in the forward direction toward a gate electrode 7 are provided between main electrodes 5 and 8 and the gate electrode 7. For example, a high concentration (n) layer 103 is formed in a boundary region between an island 101 is semiconductor substrate and an insulating film 102. In this island 101, a PB laye 2 and a PE layer 4 are formed by impurity diffusion. An nE layer 1 is formed in the PB layer 2. A part, in which impurities are not diffused, works as a thyristor nB layer 3. On a substrate 100, a silicon oxide film 104 is provided. Through holes provided in the film 104, the cathode electrode 5, the gate electrode and the MOS electrode 6 and 7, and the anode electrode 8 are provided. Resistors and diodes 10-13, 9 and 12 are connected between the gate electrode 7 and the anode electrode 8 and between the gate electrode 7 and the cathode electrode 5 as shown in the Figure. |
