| 摘要 |
PURPOSE:To improve the dark current characteristics and reproducibility of a solid-state image pickup element using an amorphous silicon hydride as a photoconductive material and an aluminum alloy as an electrode material by each specifying the areas of a recessed section and a projecting section, the depth of the recessed section and the height of the projecting section in the irregularities of the surface of a collector electrode. CONSTITUTION:Regarding the irregularities of the surface of an aluminum alloy collector electrode 103 for a solid-state image pickup element with a photoconductor 102 containing silicon and the carrier collector electrode 103 consisting of an aluminum alloy containing at least one of silicon or copper, a recessed section is brought to 0.05mum<2> or less and a projecting section to 0.005mum<2> or less in areas, and the recessed section is brought to 0.1mum or less and the projecting section to 0.05mum or less in depth and height. Accordingly, the solid-state image pickup element having excellent dark current characteristics and reproducibility is obtained. |
