| 摘要 |
A method for manufacturing a semiconductor device is disclosed which comprises the steps of forming an element isolating region of a first conductivity type, forming an insulating film on the surface of the element region which is isolated by the element isolating region, selectively forming a gate electrode on the insulating film, doping an impurity of a second conductivity type into the element region as a first doping step with the gate electrode and element isolating region as masks; sequentially forming a oxidizable first film and a second film on the whole surface of the resultant structure, anisotropically etching the second film to partly leave the second film area on that portion of the oxidizable first film which is located on the side wall of the gate electrode, doping an impurity of a second conductivity type with the remaining second film, gate electrode and element isolating region as masks, removing the remaining second film, and converting the oxidizable first film to an oxide film.
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