| 摘要 |
PURPOSE:To form a film at different temperatures for the same wafer in a short time by holding a substrate cooling mechanism capable of repeating movements of approaching the back surface of a substrate, cooling the substrate and parting from the substrate. CONSTITUTION:A wafer which is finished to pretreat by etching is disposed in a vertical attitude at a position D, then fed to a heating stage E, and heat treated by heating lamps 42. Then, the wafer is fed to the first film treating stage F of the optimum temperature higher than the room temperature, and film-treated while opposing to the first cathode 43. Then, the wafer is fed to a stage G, and film-treated in the state opposed to the second cathode 44 while cooling by a cooling mechanism to the second optimum temperature. Further, it is returned to horizontal, and fed to a posttreating stage H. A substrate cooling mechanism contacts the back surface of the wafer in the stage G by the reciprocating motion shown by arrows 111, 112 to cool the wafer when the wafer is stopped, and separates from the back surface of the wafer when the wafer is rotatably moved.
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