| 摘要 |
PURPOSE:To realize, in the most suitable condition, junctions both of a die- bonding part and of a wire bonding part, by forming an Ag layer for the die- bonding part by plating where an Ag is most suitable for a brazing filler material, and forming an Al layer for a wire bonding part by vapor deposition where the Al is most suitable for the wire bonding of the Al wire. CONSTITUTION:An Ag layer 4a which is most suitable for the brazing filler material of die-bonding is formed by plating on the die-bonding part of a lead frame base 1, and an Al layer 4b which is most suitable for the wire bonding of an Al wire 7 is formed by vapor deposition on the wire bonding part. Thus what is called the junction layer is formed independently for the die-bonding part and for the wire bonding part. A semiconductor element 6 is mounted, as usual, by applying the lead frame base 1 constituted in such a manner. |
