| 摘要 |
<p>PURPOSE:To enable a gate length to be determined in accordance with the thickness of the gate for the purpose of facilitating the control of the gate length and obtaining a correct gate length, by arranging a gate electrode at a position closer to a source electrode than to a drain electrode with an insulating material interposed therebetween so that the end face of the gate electrode provides an effective gate length. CONSTITUTION:A semiconductor layer 2 doped with an N-type impurity is epitaxially grown on a semiconductor substrate 1 having a high concentration of an N-type impurity. A semiconductor layer 3 doped with a high concentration of an N-type impurity is epitaxially grown on the layer 2. Using a mask 4, the substrate is selectively etched to remove the regions containing the semiconductor layer 3 and a part of the semiconductor layer 2 so that grooves 5 are formed in these regions. An insulating material 6 and a gate metal 7 are anisotropically deposited in these grooves 5. After removing the mask 4, a source electrode 8 is formed on the semiconductor layer 3. In the vertical field effect transistor thus produced, the gate metal 7 within the groove 5 serves as a gate electrode. A drain electrode is provided on the rear face of the substrate 1.</p> |
