| 发明名称 |
FIELD EFFECT TRANSISTOR AND METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR |
| 摘要 |
The invention relates to a field effect transistor with a drain region, a source region, a channel region and a gate region. The gate region is provided with a metal layer.
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| 申请公布号 |
WO0188996(A1) |
申请公布日期 |
2001.11.22 |
| 申请号 |
WO2001DE01798 |
申请日期 |
2001.05.14 |
| 申请人 |
INFINEON TECHNOLOGIES AG;KREUPL, FRANZ |
发明人 |
KREUPL, FRANZ |
| 分类号 |
H01L21/28;H01L21/283;H01L21/3205;H01L29/41;H01L29/423;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L49/00;(IPC1-7):H01L29/78;H01L21/320 |
主分类号 |
H01L21/28 |
| 代理机构 |
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