| 摘要 |
PURPOSE:To relax the effects of heat and stress while maintaining the degree of integration by connecting a bump and a wiring layer through a rectangular region having width wider than the wiring layer and predetermined length on an insulating film in a semiconductor substrate. CONSTITUTION:A Pt layer 23 is formed in width wider than an Au wiring layer 25 on an insulating film 22 in a semiconductor substrate and used as a stress relaxing region 320, a value larger than 5 and smaller than 50 is selected as length mum, and a bump 120 is shaped onto the region 320. According to the constitution, connecting sections resisting a high temperature and high pressure are acquired, thus allowing simultaneous joining with high quality in a device with a large number of leads.
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