| 摘要 |
PURPOSE:To form a fine pattern and reduce the cost of a photoresist process even if negative type resist is employed by a method wherein the film thickness of the resist is made to be thin enough to facilitate fine grooving by a short time exposure. CONSTITUTION:Negative type photoresist is applied to a semiconductor substrate 1 of silicon or the like by spin-coating so as to have a film thickness of 8000-10000Angstrom and then backed at 80-90 deg.C. After a photomask is set, the resist is exposed for a period of 1/3-1/2 of the exposure period of printing in single process in a mask aligner. Then the resist is developed in a normal developing time and, after drying, by using the mask aligner without using the photomask, the whole surface is exposed for a normal exposure period. Then the semiconductor substrate is baked at about 150 deg.C.
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