发明名称 PRODUCTION OF SILICON
摘要 PURPOSE:To produce an Si film which is uniform and dense inexpensively and easily with an electroless method by adding a reducing agent in a nonqueous solvent contg. an Si compd. CONSTITUTION:An Si film which is uniform and dense is formed on a base plate with an electroless method by adding a reducing agent in a nonaqueous solvent contg. an Si compd. incorporated in a reaction vessel. Still more as the nonqueous solvent, ethyl alcohol and ethylene glycol, etc., are used and as the Si compd., trichlorosilane and tetraethoxysilane, etc., are used and the concn. is nearly regulated to 0.2mol soln. - a saturated soln. Also as the reduc ing agent, alkali metal and alkali earth metal are used and the concn. is regulat ed to about 1-10 times quantities of the theoretical quantity necessary to deposit Si.
申请公布号 JPS61295220(A) 申请公布日期 1986.12.26
申请号 JP19850137503 申请日期 1985.06.24
申请人 NITTO ELECTRIC IND CO LTD 发明人 TSUNOHASHI TAKESHI
分类号 C01B33/02;C01B33/023;C23C18/12;C23C18/31;H01L31/04;H01L31/18 主分类号 C01B33/02
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