| 摘要 |
PURPOSE:To make the coverage of a gate electrode in a groove type capacitor excellent and to improve the withstanding voltage of the capacitor, by providing the groove for the capacitor, which has a slant wall opened outward, and providing a gate insulating layer and the gate electrode. CONSTITUTION:A groove 5 for a capacitor, which has a slant wall is formed on a semiconductor substrate 1 comprising a silicon substrate. A gate oxide film 6 having a thickness of 200Angstrom is formed on the semiconductor substrate 1 including the inner surface of the groove 5. On this gate oxide film 6, a gate electrode 7 comprising polycrystalline silicon, in which, e.g., phosphorus is added, is formed. The vertical wall surface part is reduced by the amount of the slant wall of the groove 5, which is formed in the semiconductor substrate 1. Therefore, the coverage of the gate electrode 7 in the groove becomes excellent. The gate electrode 7 is not cut in the groove. Since the groove 5 has the slant wall, the local concentration of an electric field can be alleviated. |
