| 摘要 |
PURPOSE:To obtain a conductive layer with good reproducibility without complicated treatments, by measuring a lattice parameter of crystals and determining a dose for the ion implantation on the basis of the value of the lattice parameter. CONSTITUTION:A conductive layer as required is formed by implanting ions in the family III-V compound semiconductor crystals. For that purpose, a relation of a lattice parameter of the compound semiconductor crystals to an activation rate thereof with respect to the implanted impurity is predetermined. The lattice parameter of the family III-V compound semiconductor crystal substrate to be used is measured, and the activation rate of the crystal with respect to the impurity to be implanted is obtained from the predetermined relation between the lattice parameter and the activation rate. A quantity of the impurity to be implanted is determined on the basis of the activation rate thus obtained so as to produce a conductive layer as required, and the ion implantation is performed in that quantity. According to this method, a conductive layer with good reproducibility can be obtained.
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